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       Symbol Min Typ Max Unit Parameter Conditions Forward voltage IF = 1 0mA VF V 0.45 Reverse current Capacitance between terminals VR = 1 0V f = 1 MHz, and 10 VDC reverse voltage IR CT uA pF 6 1 CDBU0140R-HF SMD Schottky Barrier Diode QW-G1022 Features - Low reverse current. - Designed for mounting on small surface. - Extremely thin / leadless package. - Majority carrier conduction. Mechanical data - Case: 0603/SOD-523F s tandard package, m olded plastic. - Terminals: Gold plated, solderable per M IL-STD-750,method 2026. - Marking Code: Cathode band & B9 - Mounting position: Any. - Weight: 0.003 gram(approx.). 5 O C unless otherwise noted) Electrical Characteristics (at TA=2 Page 1 REV:A 0.071(1.80) 0.063(1.60) 0.014(0.35) Typ. 0.039(1.00) 0.031(0.80) 0.033(0.85) 0.027(0.70) Dimensions in inches and (millimeter) 0.012 (0.30) Typ. 0.028(0.70) Typ. +125 O C TSTG 5 O C unless otherwise noted) Maximum Rating (at TA=2 n Typ Max Unit IO VR VRRM Average forward rectified current Reverse voltage Repetitive Peak reverse voltage Forward current,surge peak Symbol Mi Parameter Conditions V V mA 100 40 45 Tj Storage temperature Junction temperature O C +125 -40 IFSM 8.3 ms single half sine-wave superimposed on rate load (JEDEC method) 1 A mW 150 PD Power Dissipation Comchip Technology CO., LTD. 0603/SOD-523F Io = 1 00 mA VR = 4 0 Volts RoHS Device Halogen Free |